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These defects may consist of impurity elements as well as structural defects within grains such as dislocations and dislocation networks
本スタンダードは，global Silicon Wafer Committeeで技術的に承認されている。現版は2010年12月21日，global Audits and Reviews Subcommitteeにて発行が承認された。2011年2月にwww
and JIS G 4318
SEMI E57 — Mechanical Specification for Kinematic Couplings Used to Align and Support 300 mm Wafer Carriers
SEMI F45-0307 (Reapproved 0818)
M04000 - SEMI M40 - シリコンウェーハ表面のラフネス測定のガイド Revision:SEMI M40-1109 - Superseded These defects may consist ofglobal Silicon Wafer Committee200994global Audits and Reviews Subcommittee200910www. semi. org200911CD ROM20002 SEMI M1 3 Referenced SEMI Standards SEMI E89 Guide for Measurement System Analysis (MSA) SEMI M1 Specifications for Polished Single Crystal Silicon Wafers SEMI M20 Practice for Establishing a Wafer Coordinate System SEMI M50 Test Method for Determining Capture Rate and False Count Rate
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